Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

High Mobility Strained Si/SiGe Heterostructure MOSFETs

Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...

Transport in Thin-Body MOSFETs Fabricated in Strained Si and Strained Si/SiGe Heterostructures on Insulator

The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive device scaling in future CMOS technology nodes. Two structures that combine strain engineering an...

Fully Self-consistent Quantum Mechanical Device Simulator for Modeling P Channel Strained Sige Mosfets

Over the past three decades, silicon MOS-based integrated circuits, such as microprocessors, have consistently delivered greater functionality at higher performance and lower cost per function. An empirical observation called Moore’s Law [1] is commonly quoted to highlight the exponential rates of increase in circuit speed and integration density as MOS transistors have scaled down in channel l...

Engineering piezoresistivity using biaxially strained silicon

Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

An investigation of dynamic-threshold (DT) performance was carried out on a 0.5 μm gate length p-type Si:SiGe heterostructure field effect transistor, for temperatures ranging from T = 300 K to T = 10 K. The maximum low-field transconductance of DT-mode operation was found to be 30% higher than in normal mode, through a better control of carriers in the channel. The subthreshold slope of the de...